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automotive power data sheet rev. 1.0, 2013-01-31 BTN8980TA high current pn half bridge novalithic?
data sheet 2 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2.1 power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.2 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2.3 power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.1 undervoltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.2 overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.3 current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.4 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.5 electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.4 control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.2 dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.3 adjustable slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.4 status flag diagnosis with current sense capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.5 truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.4.6 electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.1 application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.2 layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.3 pwm control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
pg-to263-7-1 type package marking BTN8980TA pg-to263-7-1 BTN8980TA data sheet 3 rev. 1.0, 2013-01-31 high current pn half bridge novalithic? BTN8980TA 1overview features ? path resistance of max. 20.4 m @ 150 c (typ. 10.0 m @ 25 c) high side: max. 10.5 m @ 150 c (typ. 5.3 m @ 25 c) low side: max. 9.9 m @ 150 c (typ. 4.7 m @ 25 c) ? enhanced switching speed for reduced switching losses ? capable for high pwm frequency combined with active freewheeling ? low quiescent current of typ. 7 a @ 25 c ? switched mode current limitation for reduced power dissipation in overcurrent ? current limitation level of 55 a min. ? status flag diagnosis with current sense capability ? overtemperature shut down with latch behaviour ? undervoltage shut down ? driver circuit with logic level inputs ? adjustable slew rates for optimized emi ? operation up to 40v ? green product (rohs compliant) ? aec qualified description the BTN8980TA is an integrated high current half bridge for motor drive applications. it is part of the novalithic? family containing one p-channel highside mosfet and one n-channel lowside mosfet with an integrated driver ic in one package. due to the p-channel highside switch th e need for a charge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by th e integrated driver ic which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protecti on against overtemperature, undervoltage, overcurrent and short circuit. the BTN8980TA provides a cost optimized solution for protected high current pwm motor drives with very low board space consumption.
data sheet 4 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block diagram 2 block diagram the BTN8980TA is part of the novalithic? family containing three separate chips in one package: one p-channel highside mosfet and one n-channel lowside mosfet toge ther with a driver ic, forming an integrated high current half-bridge. all three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology. the power s witches utilize vertical mos technologies to ensure op timum on state resistance. due to the p-channel highside switch the need for a char ge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by the integrated driv er ic which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generati on and protection against overtemperature, undervoltage, overcurrent and short circuit. the BTN8980TA can be combined with other BTN8980TA to form h-bridge and 3- phase drive configurations. 2.1 block diagram figure 1 block diagram 2.2 terms following figure shows the terms used in this data sheet. figure 2 terms is sr inh in gnd out vs gate driver hs slewrate adjustment digital logic undervolt. detection overtemp . detection current limitation ls current limitation hs current sense gate driver ls ls off hs off i in v in out i inh v inh v sr i sr v is i is v s i out , i l v out v ds(hs) gnd i gnd, i d(ls) i vs , -i d(hs) in inh sr is vs v ds(ls)
data sheet 5 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA pin configuration 3 pin configuration 3.1 pin assignment figure 3 pin assignment BTN8980TA (top view) 3.2 pin definitions and functions bold type: pin needs power wiring pin symbol i/o function 1gnd -ground 2 in i input defines whether high- or lowside switch is activated 3 inh i inhibit when set to low device goes in sleep mode 4,8 out o power output of the bridge 5sr islew rate the slew rate of the power switch es can be adjusted by connecting a resistor between sr and gnd 6 is o current sense and diagnostics 7 vs - supply 1 2 35 6 7 4 8
data sheet 6 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA general product characteristics 4 general product characteristics 4.1 absolute maximum ratings absolute maximum ratings 1) t j = -40 c to +150 c; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) not subject to production test, specified by design pos. parameter symbol limit values unit conditions min. max. voltages 4.1.1 supply voltage v s -0.3 40 v ? 4.1.2 drain-source voltage high side v ds(hs) -40 ? v t j 25c -38 ? v t j < 25c 4.1.3 drain-source voltage low side v ds(ls) ?40v t j 25c ?38v t j < 25c 4.1.4 logic input voltage v in v inh -0.3 5.3 v ? 4.1.5 voltage at sr pin v sr -0.3 1.0 v ? 4.1.6 voltage between vs and is pin v s - v is -0.3 40 v ? 4.1.7 voltage at is pin v is -20 40 v ? currents 4.1.8 hs/ls conti nuous drain current 2) 2) maximum reachable current may be smaller depending on current limitation level i d(hs) i d(ls) -50 50 a t c < 85c switch active -44 44 a t c < 125c switch active 4.1.9 hs/ls pulsed drain current 2) i d(hs) i d(ls) -117 -104 117 104 a t pulse = 10ms single pulse t c < 85c t c < 125c 4.1.10 hs/ls pwm current 2) i d(hs) i d(ls) -68 -60 68 60 a f = 1khz, dc = 50% t c < 85c t c < 125c -70 -62 70 62 a f = 20khz, dc = 50% t c < 85c t c < 125c temperatures 4.1.11 junction temperature t j -40 150 c? 4.1.12 storage temperature t stg -55 150 c? esd susceptibility 4.1.13 esd resistivity hbm in, inh, sr, is out, gnd, vs v esd -2 -6 2 6 kv hbm 3) 3) esd susceptibility, hbm accordin g to ansi/esda/jedec js-001 (1,5k ? , 100pf)
data sheet 7 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA general product characteristics note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. maximum single pulse current figure 4 BTN8980TA maximum single pulse current ( t c < 85 c) this diagram shows the maximum single pulse curr ent that can be driven for a given pulse time t pulse . the maximum reachable current may be smaller depending on the current limitation level. pulse time may be limited due to thermal protection of the device. 4.2 functional range note: within the functional or operating range, the ic operat es as described in the circuit description. the electrical characteristics are specif ied within the conditions given in th e electrical char acteristics table. pos. parameter symbol limit values unit conditions min. max. 4.2.1 supply voltage range for normal operation v s(nor) 818v? 4.2.2 extended supply voltage range for operation v s(ext) 6.0 40 v parameter deviations possible 4.2.3 junction temperature t j -40 150 c? 0 10 20 30 40 50 60 70 80 90 100 110 120 1,0e-03 1,0e-02 1,0e-01 1,0e+00 1,0e+01 t pulse [s] |i max | [a]
data sheet 8 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA general product characteristics 4.3 thermal resistance pos. parameter symbol limit values unit conditions min. typ. max. 4.3.1 thermal resistance junction-case, high side switch r thjc(hs) = t j(hs) / p v(hs) r thjc(hs) ? 0.55 0.8 k/w 1) 4.3.2 thermal resistance junction-case, low side switch r thjc(ls) = t j(ls) / p v(ls) r thjc(ls) ? 1.1 1.6 k/w 1) 1) not subject to production test, specified by design 4.3.3 thermal resistance junction-ambient r thja ?19?k/w 1) 2) 2) specified r thja value is according to jedec jesd51-2,-5,-7 at natural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm boar d with 2 inner copper layers (2 x 70m cu, 2 x 35m cu). where applicable a thermal via array under the ex posed pad contacted the first inner copper layer.
high current pn half bridge BTN8980TA block description and characteristics data sheet 9 rev. 1.0, 2013-01-31 5 block description and characteristics 5.1 supply characteristics figure 5 typical quiescent current vs. junction temperature v s = 8 v to 18 v, t j = -40 c to +150 c, i l = 0 a, all voltages with respect to gr ound, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. general 5.1.1 supply current i vs(on) ?2.23.3ma v inh = 5 v v in = 0v or 5v r sr = 0 dc-mode normal operation (no fault condition) 5.1.2 quiescent current i vs(off) ?713a v inh = 0 v v in = 0v or 5v t j < 85 c 1) 1) not subject to production test, specified by design ??75a v inh = 0 v v in = 0v or 5v i vs(off) [a] t [c] vs = 18v vs = 14v vs = 8v
data sheet 10 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics 5.2 power stages the power stages of the BTN8980TA consist of a p-channel vertical dmos transistor for the high side switch and a n-channel vertical dmos transistor fo r the low side switch. all protection and diagnostic functions are located in a separate top chip. both switches allow active freewh eeling and thus minimizing power dissipation during pwm control. the on state resistance r on is dependent on the supply voltage v s as well as on the junction temperature t j . the typical on state resistance characteristics are shown in figure 6 . figure 6 typical on state resistance vs. supply voltage t j = 150c t j = 25c t j = -40c low side switch v s [v] r on(ls) [m ] t j = 150c t j = 25c t j = -40c high side switch v s [v] r on(hs) [m ]
high current pn half bridge BTN8980TA block description and characteristics data sheet 11 rev. 1.0, 2013-01-31 5.2.1 power stages - static characteristics v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respec t to ground, positive cu rrent flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. high side switch - static characteristics 5.2.1 on state high side resistance r on(hs) ? ? 5.3 8.0 ? 10.5 m i out = 9 a; v s = 13.5 v t j = 25 c; 1) t j = 150 c 1) not subject to production test, specified by design ? ? 7.5 10 ? 15.2 m i out = 6 a; v s = 6 v t j = 25 c; 1) t j = 150 c 5.2.2 leakage current high side i l(lkhs) ??2a v inh = 0 v; v out = 0 v t j < 85 c; 1) ?? 60a v inh = 0 v; v out = 0 v t j = 150 c 5.2.3 reverse diode forward-voltage high side 2) 2) due to active freewheeling, diode is conducting only for a few s, depending on r sr v ds(hs) ? ? ? 0.9 0.8 0.6 ? ? 0.8 v i out =-9a t j = -40 c; 1) t j = 25 c; 1) t j = 150 c low side switch - static characteristics 5.2.4 on state low side resistance r on(ls) ? ? 4.7 7.5 ? 9.9 m i out =-9a; v s = 13.5 v t j = 25 c; 1) t j = 150 c ? ? 6 9.5 ? 13.5 m i out = -6 a; v s = 6 v t j = 25 c; 1) t j = 150 c 5.2.5 leakage current low side i l(lkls) ??2a v inh = 0 v; v out = v s t j < 85 c; 1) ?? 30a v inh = 0 v; v out = v s t j = 150 c 5.2.6 reverse diode forward-voltage low side 2) -v ds(ls) ? ? ? 0.9 0.8 0.7 ? ? 0.9 v i out = 9 a t j = -40 c; 1) t j = 25 c; 1) t j = 150 c
data sheet 12 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics 5.2.2 switching times figure 7 definition of swit ching times high side (r load to gnd) figure 8 definition of switching times low side (r load to vs) due to the timing difference s for the rising and the falli ng edge there will be a slight difference betw een the length of the input pulse and the length of the output puls e. it can be calculated using the following formulas: ? t hs = ( t dr(hs) + 0.5 t r(hs) ) - ( t df(hs) + 0.5 t f(hs) ) ? t ls = ( t df(ls) + 0.5 t f(ls) ) - ( t dr(ls) + 0.5 t r(ls) ). in v out t t v out t dr(hs) t r(h s) t df(hs) t f(hs) v out 20% 20% 80% 80% in v out t t v out t df(ls) t f(ls) v out t dr(ls) t r(l s) 20% 20% 80% 80%
high current pn half bridge BTN8980TA block description and characteristics data sheet 13 rev. 1.0, 2013-01-31 5.2.3 power stages - dynamic characteristics v s = 13.5 v, t j = -40 c to +150 c, r load = 2 , 30h < l load < 40h (in series to r load ), single pulse, all voltages with respect to ground, positive curr ent flowing into pin (unl ess otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. high side switch dynamic characteristics 5.2.7 rise-time of hs t r(hs) 0.05 ? 0.22 0.25 0.38 1.3 0.85 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.8 switch on delay time hs t dr(hs) 1.5 ? 2 3.4 5.2 15 5.3 ? 35 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.9 fall-time of hs t f(hs) 0.05 ? 0.22 0.25 0.38 1.3 0.85 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.10 switch off delay time hs t df(hs) 0.8 ? 1.1 2.4 3.6 10 4.6 ? 24 s r sr = 0 r sr = 5.1 k r sr = 51 k
data sheet 14 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics v s = 13.5 v, t j = -40 c to +150 c, r load = 2 , 30h < l load < 40h (in series to r load ), single pulse, all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. low side switch dynamic characteristics 5.2.11 rise-time of ls t r(ls) 0.05 ? 0.22 0.25 0.38 1.3 0.85 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.12 switch off delay time ls t dr(ls) 0.2 ? 1 1.5 2.4 8 2.8 ? 20 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.13 fall-time of ls t f(ls) 0.05 ? 0.22 0.25 0.38 1.3 0.85 ? 6 s r sr = 0 r sr = 5.1 k r sr = 51 k 5.2.14 switch on delay time ls t df(ls) 1.8 ? 2.0 4.2 6 16 6.7 ? 40 s r sr = 0 r sr = 5.1 k r sr = 51 k
high current pn half bridge BTN8980TA block description and characteristics data sheet 15 rev. 1.0, 2013-01-31 5.3 protection functions the device provides integrated protection functions. these are designed to prevent ic destruction under fault conditions described in the data s heet. fault conditions are considered as ?outside? normal operating range. protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation ( chapter 5.3.3 ). in case of overtemperatur e the BTN8980TA will apply the sl ew rate determined by the connected slew rate resistor. in cu rrent limitation mode the highest slew rate po ssible will be applied independent of the connected slew rate resistor. overtemperatur e and overcurrent are indicated by a fault current i is(lim) at the is pin as described in the paragraph ?status flag diagnosis with current sense capability? on page 19 and figure 12 . 5.3.1 undervoltage shut down to avoid uncontrolled motion of the driven motor at low vo ltages the device shuts off (o utput is tri-state), if the supply voltage drops belo w the switch-o ff voltage v uv(off) . the ic becomes active again with a hysteresis v uv(hy) if the supply voltage rises above the switch-on voltage v uv(on) . 5.3.2 overtemperature protection the BTN8980TA is protected against overtemperature by an integrated temperature sensor. overtemperature leads to a shut down of both output stages. this state is latched until the device is reset by a low signal with a minimum length of t reset at the inh pin, provided that its temperatur e has decreased at least the thermal hysteresis t in the meantime. repetitive use of the overtemper ature protection impacts lifetime. 5.3.3 current limitation the current in the bridge is measured in both switches. as soon as the current in forward direction in one switch (high side or low side) is reaching the limit i clx , this switch is deactivated and the other switch is activated for t cls . during that time all changes at the in pin are ignored. however, the inh pin can still be used to switch both mosfets off. after t cls the switches return to their initial setting. th e error signal at the is pin is reset after 2 * t cls . unintentional triggering of the current limitation by shor t current spikes (e.g. inflic ted by emi coming from the motor) is suppressed by internal filter circuitry. due to thresholds and reaction delay times of the filter circuitry the effective current limitation level i clx depends on the slew rate of the load current di/dt as shown in figure 10 . figure 9 timing diagram current limitation (inductive load) i l t i clx t cls i clx0
data sheet 16 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics figure 10 typical current limitation detection level vs. current slew rate di l /dt figure 11 typical current limitation detection levels vs. supply voltage in combination with a typical inductive load, such as a motor, this resu lts in a switched m ode current limitation. this method of limiting the current has the advantage of greatly reduced power dissipation in the BTN8980TA di l /dt i clh [a] [a/ms] i clh0 t j = 25c t j = 150c t j = -40c high side switch i cll0 t j = 25c t j = -40c t j = 150c di l /dt i cll [a] [a/ms] low side switch t j = 25c high side switch t j = -40c t j = 150c v s [v] i clh [a] t j = 25c low side switch t j = -40c t j = 150c v s [v] i cll [a]
high current pn half bridge BTN8980TA block description and characteristics data sheet 17 rev. 1.0, 2013-01-31 compared to driving the mosfet in linear mode. therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temper ature (e.g. for limiting the inrush current during motor start up). however, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. exceeding this temp erature can reduce the lifetime of the device. 5.3.4 short circuit protection the device provides embedded protection functions against ? output short circuit to ground ? output short circuit to supply voltage ? short circuit of load the short circuit protection is realized by the previously described current limitation in combination with the over- temperature shut down of the device.
data sheet 18 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics 5.3.5 electrical characteris tics - protection functions v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respec t to ground, positive cu rrent flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. under voltage shut down 5.3.1 switch-on voltage v uv(on) ??5.5v v s increasing 5.3.2 switch-off voltage 1) 1) with decreasing v s < 6.0 v activation of the current limitation m ode may occur before undervoltage shut down . v uv(off) 3.0 ? 4.5 v v s decreasing, inh = 1 5.3.3 on/off hysteresis v uv(hy) ?0.2?v 2) 2) not subject to production test, specified by design. current limitation 5.3.4 current limitation detection level high side i clh0 55 77 98 a v s = 13.5 v 5.3.5 current limitation detection level low side i cll0 55 77 98 a v s = 13.5 v current limitation timing 5.3.6 shut off time for hs and ls t cls 70 115 210 s v s = 13.5 v; 2) thermal shut down 5.3.7 thermal shut down junction temperature t jsd 155 175 200 c? 5.3.8 thermal switch on junction temperature t jso 150 ? 190 c? 5.3.9 thermal hysteresis t ?7?k 2) 5.3.10 reset pulse at inh pin (inh low) t reset 4??s 2)
high current pn half bridge BTN8980TA block description and characteristics data sheet 19 rev. 1.0, 2013-01-31 5.4 control and diagnostics 5.4.1 input circuit the control inputs in and inh consist of ttl/cmos compatib le schmitt triggers with h ysteresis which control the integrated gate drivers for the mosfets. setting the inh pi n to high enables the device. in this condition one of the two power switches is switched on depending on the st atus of the in pin. to deact ivate both switches, the inh pin has to be set to low. no external driver is ne eded. the BTN8980TA can be interfaced directly to a microcontroller, as long as the maximum ratings in chapter 4.1 are not exceeded. 5.4.2 dead time generation in bridge applications it has to be assured that the highside and lowside mosfet are not conducting at the same time, connecting directly the battery voltage to gnd. this is assured by a circuit in the driver ic, generating a so called dead time between switching off one mosfet and switching on the other. the dead time generated in the driver ic is automatically adjust ed to the selected slew rate. 5.4.3 adjustable slew rate in order to optimize electromagnetic emission, the switch ing speed of the mosfetss is adjustable by an external resistor. the slew rate pin sr allows the user to op timize the balance between emission and power dissipation within his own application by conn ecting an external resistor r sr to gnd. 5.4.4 status flag diagnosis wi th current sense capability the sense pin is is used as a combined current sense and error flag output. in normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side swit ch. the sense current can be calculated out of the load cu rrent by the following equation: (1) the other way around, the load current can be calcul ated out of the sense current by following equation: (2) the differential current sense ratio d k ilis is defined by: (3) if the high side drain current is zero ( i sd(hs) = 0a) the offset current i is = i is(offset) still will be driven. the external resistor r is determines the voltage per is output current. the voltage can be calculated by v is = r is . i is . in case of a fault condition the status output is connected to a current so urce which is independent of the load current and provides i is(lim) . the maximum voltage at the is pin is determ ined by the choice of the external resistor and the supply voltage. in ca se of current limitation the i is(lim) is activated for 2 * t cls . i is 1 dk ilis --------------- - i l ? i is offset () + = i l dk ilis i is i is offset () ? () ? = d k ilis i l2 i l1 ? i is i l2 () i is i l1 () ? -------------------------------------------- =
data sheet 20 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics figure 12 sense current and fault current figure 13 sense current vs. load current vs r is i is ~ i load esd-zd v is sense output logic is i is(lim) i is(offset) normal operation: current sense mode vs r is i is ~ i load esd-zd v is sense output logic is i is(lim) i is(offset) fault condition: error flag mode i l [a] i is(lim) i is [ma] i clx error flag mode l o w e r d k i l i s v a l u e h i g h e r d k i l i s v a l u e current sense mode (high side) i is(offset)
high current pn half bridge BTN8980TA block description and characteristics data sheet 21 rev. 1.0, 2013-01-31 5.4.5 truth table device state inputs outputs mode inh in hss lss is normal operation 0 x off off 0 stand-by mode 10 offon i is(offset) lss active 1 1 on off cs hss active under-voltage (uv) x x off off 0 uv lockout, reset overtemperature (ot) or short circuit of hss or lss 0 x off off 0 stand-by mode, reset of latch 1 x off off 1 shut-down with latch, error detected current limitation mode/ overcurrent (oc) 1 1 off on 1 switched mode, error detected 1) 1) will return to normal operation after t cls ; error signal is reset after 2* t cls (see chapter 5.3.3 ) 1 0 on off 1 switched mode, error detected 1) inputs switches current sense / status flag is 0 = logic low off = switched off i is(offset) = current sense - offset (for conditions see table: current sense ) 1 = logic high on = switched on cs = current sense - high side (for conditions see table: current sense ) x = 0 or 1 1 = logic high (error)
data sheet 22 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA block description and characteristics 5.4.6 electrical characteristi cs - control and diagnostics figure 14 typical current sense offset current v s = 8 v to 18 v, t j = -40 c to +150 c, all voltages with respec t to ground, positive cu rrent flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. control inputs (in and inh) 5.4.1 high level voltage inh, in v inh(h) v in(h) ? ? 1.75 1.6 2.15 2 v? 5.4.2 low level voltage inh, in v inh(l) v in(l) 1.1 1.4 ? v ? 5.4.3 input voltage hysteresis v inhhy v inhy ? ? 350 200 ? ? mv 1) 1) not subject to production test, specified by design 5.4.4 input current high level i inh(h) i in(h) 10 30 150 a v in = v inh = 5.3 v 5.4.5 input current low level i inh(l) i in(l) 10 25 125 a v in = v inh = 0.4 v current sense 5.4.6 differential current sense ratio in static on-condition dk ilis = d i l / d i is dk ilis 14 19.5 25 10 3 r is = 1 k i l1 = 10 a i l2 = 40 a 5.4.7 maximum analog sense current, sense current in fault condition i is(lim) 456.5ma v s = 13.5 v r is = 1k 5.4.8 isense leakage current i isl ??1a v inh = 0 v 5.4.9 isense offset current i is(offset) 30 170 385 a v s = 18v; v inh = 5 v i sd(hs) = 0a t j = 150c t j = 25c t j = -40c v s [v] i is-offset [ma ] ] t [c]
data sheet 23 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA application information 6 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 application circuit figure 15 application circuit: h-bridge with two BTN8980TA note: this is a simplified example of an application circuit. the function must be verified in the real application. 6.2 layout considerations due to the fast switching times for high currents, special care has to be taken to the pcb layout. stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. the BTN8980TA has no separate pin for power ground and logic ground. therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (gnd / pin 1) is minimized. if the BTN8980TA is used in a h-bridge or b6 bridge design, the voltage offset between the gnd pins of the di fferent devices should be small as well. due to the fast switching behavior of the device in cu rrent limitation mode a low esr electrolytic capacitor c s from vs to gnd is necessary. this prevents destructive voltage peaks and drops on vs. this is needed for both pwm and non pwm controlled applications . to assure efficiency of c s and c sc the stray inductance must be low. therefore the capacitors must be placed very close to th e device pins. the value of th e capacitors must be verified in the real application, taking care for low ripp le and transients at the vs pin of the BTN8980TA. the digital inputs need to be protected from excess cu rrents (e.g. caused by induced voltage spikes) by series resistors greater than 7k . optional m xc866 tle 4278g i/o reset vdd vss wo ro q d gnd i microcontroller voltage regulator c 19 100nf c d 47nf c q 22f c 10 1000f r 11 10k r 12 10k r 111 0..51k r 112 1k i/o i/o c i 470nf c 1o 2v 220nf c 1out 220nf c 2o2v 220nf c 2out 220nf c 29 100nf r 211 0..51k i/o a/d r 22 10k r 21 10k r 212 1k a/d inh in is sr BTN8980TA vs out gnd inh in is sr BTN8980TA vs out gnd v s reverse polarity protection ( ipd90 p03 p 4l- 04 ) r 3 10k d z1 10v c 1 100nf l 1 c 22 100nf c 2is 1nf c 1is 1nf c 12 100nf
data sheet 24 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA application information figure 16 application circuit: half-bridge with a BTN8980TA (load to gnd) note: this is a simplified example of an application circuit. the function must be verifi ed in the real application. 6.3 pwm control for the selection of the max. pwm frequency the choose n rise/fall-time and the requirements on the duty cycle have to be taken into account. we recommend a pwm-period at least 10 times the rise-time. example: rise-time = fall-time = 4s. => t-pwm = 10 * 4s = 40s. => f-pwm = 25khz. the min. and max. value of the duty cycle (pwm on to o ff percentage) is det ermined by the real fall time plus the real rise time. in this example a duty cyc le make sense from app roximately 20% to 80%. if a wider duty cycle range is needed, the pwm frequenc y could be decreased and/or the rise/fall-time could be accelerated. m xc866 tle 4278g v s i/o reset vdd vss wo ro q d gnd i microcontroller reverse polarity protection (ipd90 p03 p 4l-04 ) voltage regulator c 9 100nf c d 47nf c q 22f c 10 1000f r 3 10k d z1 10v r 1 10k r 2 10k r 11 0..51k r 12 1k i/o i/o i/ o c i 470nf c is 1nf c o2v 220nf c 1 100nf l 1 c out 220nf c 2 100nf inh in is sr vs out gnd BTN8980TA
data sheet 25 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA package outlines 7 package outlines figure 17 pg-to263-7-1 (plastic green transistor single outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). a b a 0.25 m 0.1 typical ?.2 10 8.5 1) 7.55 1) (15) ?.2 9.25 ?.3 1 0...0.15 7 x 0.6 ?.1 ?.1 gpt09114 1.27 4.4 b 0.5 ?.1 ?.3 2.7 4.7 ?.5 0.05 1) 0.1 metal surface min. x = 7.25, y = 6.9 2.4 1.27 all metal surfaces tin plated, except area of cut. 0...0.3 b 6 x 8? max. 8.42 10.8 9.4 16.15 4.6 0.47 0.8 footprint for further information on alternative packages, please visit our website: http://www.infineon.com/packages . dimensions in mm
data sheet 26 rev. 1.0, 2013-01-31 high current pn half bridge BTN8980TA revision history 8 revision history initial release.
edition 2013-01-31 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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